Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Switch Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process
نویسنده
چکیده
The effect of MOSFET gate-oxide reliability on MOS switch with bootstrapped technique is investigated with the switched-capacitor circuit in a 130-nm CMOS process. The sample-and-hold amplifier with the openloop configuration is used to verify the impact of MOS switch gate-oxide reliability on the switched-capacitor circuit. After overstress on the MOS switch of sampleand-hold amplifier, the circuit performances on the time domain and frequency domain have been measured to verify the impact of MOS switch gate-oxide reliability on circuit performance.
منابع مشابه
Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process
The MOS switch with bootstrapped technique is widely used in low-voltage switched-capacitor circuit. The switched-capacitor circuit with the bootstrapped technique could be a dangerous design approach in the nano-scale CMOS process due to the gate-oxide transient overstress. The impact of gate-oxide transient overstress on MOS switch in switchedcapacitor circuit is investigated in this work wit...
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